PUOLIJOHDEKOMPONENTTIEN ANALYSAATTORI

Ominaisuudet
 
• automatic component type identification
• automatic pinout identification
• special feature identification such as protection diodes and resistor shunts
• bipolar transistors: gain and leakage current measurements, silicon and germanium detection
• gate threshold measurement for Enhancement Mode MOSFETs
• semiconductor forward voltage measurement for diodes, LEDs and transistor Base-Emitter junctions
• automatic and manual power-off

Tekniset tiedot

• peak test current into short circuit: -5.5mA ~ 5.5mA
• peak test voltage across open circuit: -5.1V ~ 5.1V
• transistor:
    •• gain range (Hfe): 4 ~ 65000
    •• gain accuracy: ±3% ±5 Hfe
    •• Vceo test voltage: 2.0V ~ 3.0V
    •• Vbe accuracy: -2%-20mV ~ +2%+20mV
    •• VBE for Darlington (shunted): 0.95V ~ 1.80V (0.75V ~ 1.80V)
    •• base-emitter shunt threshold: 50kOhm ~ 70kOhm
    •• BJT collector test current: 2.45mA ~ 2.55mA
    •• BJT acceptable leakage: 0.7mA
    •• MOSFET:
        ••• gate threshold range: 0.1V ~ 5.0V
        ••• threshold accuracy: -2%-20mV ~ +2%+20mV
        ••• drain test current: 2.45mA ~ 255mA
        ••• gate resistance: 8kOhm
    •• depletion drain test current: 4.5mA
    •• JFET drain-source test current: 0.5mA ~ 5.5mA
• SCR/Triac:
    •• gate test current: 4.5mA
    •• load test current: 5.0mA
• Diode:
    •• test current: 5.0mA
    •• voltage accuracy: -2%-20mV ~ +2%+20mV
    •• Vf for LED identification: 1.50V ~ 4.00V
    •• short circuit threshold: 10Ohm
• Battery:
    •• type: MN21 / L1028 / GP23A 12V alkaline
    •• voltage range: 7.50V ~ 12V
    •• warning threshold: 8.25V
• dimensions: 103x70x20mm